Title :
Process effective power mosfet integrated in 0.18um platform with very Low Rdson
Author :
Levy, Scott ; Levin, S. ; Heiman, Alexey ; Berkovitch, N. ; Shapira, Shye
Author_Institution :
TowerJazz, Migdal Haemek, Israel
Abstract :
A super Low Rdson Power transistor with high Break down voltage was developed, using double Resurf technique with low mask count.
Keywords :
power MOSFET; double Resurf technique; mask count; power MOSFET; size 0.18 mum; Doping profiles; Electric fields; Logic gates; Optimization; Power transistors; Response surface methodology; Tuning; Double-Resurf; Power Mosfet; Qgate; RF; Rdson;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2013 IEEE International Conference on
Conference_Location :
Tel Aviv
DOI :
10.1109/COMCAS.2013.6685308
