Comparison of Random Dopant and Gate-Metal Workfunction Variability Between Junctionless and Conventional FinFETs

This letter reports, for the first time, the performance of a junctionless (JL) FinFET in the presence of random grain orientation-induced metal workfunction variability (WFV), as compared with a similarly sized conventional FinFET. Relative impact of random discrete dopant (RDD)-induced variability and WFV are also compared between such devices by the use of a 3-D numerical device simulator. Numerical values of standard deviation of different device parameters reveal that the performance parameters of a JL FinFET are significantly affected by WFV. In addition, the impact of the RDD, as compared with WFV, is larger in JL devices, as expected.