DocumentCode :
65503
Title :
Design of Integrated Amorphous-Silicon Thin-Film Transistor Gate Driver
Author :
Congwei Liao ; Changde He ; Tao Chen ; Dai, Dao-Qing ; Chung, Shi-Uk ; Jen, T.S. ; Shengdong Zhang
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
Volume :
9
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
7
Lastpage :
16
Abstract :
A thorough study on the gate driver integrated with hydrogenated amorphous-silicon thin-film transistors (a-Si:H TFTs) for active-matrix flat-panel display (AM-FPD) is carried out in this work. The single stage circuit of the a-Si:H gate driver consists of input, pull-up, pull-down, and low-level holding units. The operation principle of the driver is described in detail. The subtle static and dynamic characteristics of the a-Si:H TFT based circuit are analyzed systematically for the first time. The long term reliability issue is also addressed. Design equations for determining the device sizes of the circuit are derived. The TFT-LCD panels integrated with the designed gate driver are fabricated to verify the design efficiency.
Keywords :
driver circuits; elemental semiconductors; flat panel displays; liquid crystal displays; semiconductor device reliability; silicon; thin film transistors; AM-FPD; TFT-LCD panels; active-matrix flat-panel display; hydrogenated amorphous-silicon thin-film transistors; input holding units; integrated amorphous-silicon thin-film transistor gate driver design; long term reliability; low-level holding units; pull-down holding units; pull-up holding units; single stage circuit; Capacitance; Capacitors; Logic gates; Silicon; Thin film transistors; Gate driver; TFT LCD; hydrogenated amorphous silicon (a-Si:H);
fLanguage :
English
Journal_Title :
Display Technology, Journal of
Publisher :
ieee
ISSN :
1551-319X
Type :
jour
DOI :
10.1109/JDT.2012.2221154
Filename :
6343241
Link To Document :
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