Title :
A High Modulation Bandwidth, 110 GHz Power-DAC Cell for IQ Transmitter Arrays With Direct Amplitude and Phase Modulation
Author :
Balteanu, A. ; Shopov, S. ; Voinigescu, S.P.
Author_Institution :
ECE Dept., Univ. of Toronto, Toronto, ON, Canada
Abstract :
This paper studies the maximum Baud rate and the scalability to the W-Band of the mm-wave power-DAC transmitter architecture. Proof-of-concept implementations of a single DAC lane and of a 2×2 IQ transmitter array are reported in 45 nm SOI CMOS. The DAC cell achieved 29 GHz OOK and 29 GHz BPSK modulation bandwidth and 2×44 Gb/s BPSK+OOK data rates for carriers in the 100-110 GHz range. The corresponding energy efficiency is 7.5 pJ/bit at an output power of 12 dBm. For the 2×2 IQ array, an EVM of 9.0% is estimated over a 12 GHz bandwidth, from large signal power and S-parameter phase measurements.
Keywords :
CMOS integrated circuits; S-parameters; amplitude shift keying; millimetre wave antenna arrays; modulators; phase shift keying; silicon-on-insulator; transmitting antennas; BPSK modulation; IQ transmitter arrays; OOK modulation; S-parameter phase measurements; SOI CMOS; bit rate 44 Gbit/s; direct amplitude modulation; frequency 100 GHz to 110 GHz; frequency 29 GHz; millimeter wave antenna arrays; phase modulation; power-DAC cell; size 45 nm; Binary phase shift keying; CMOS integrated circuits; Gain; Logic gates; Transistors; Transmitters; BPSK modulator; IQ array; OOK modulator; QAM modulator; SOI CMOS; W band; mm-wave; mm-wave DAC; power amplifier; power-DAC; power-added efficiency; quadrature mm-wave modulator;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2014.2327216
