DocumentCode :
65524
Title :
Total Ionizing Dose Effect on Low On/Off Switching Ratio 
Memristive Memories
Author :
Yaqing Chi ; Rongrong Liu ; Zhensen Tang ; Ruiqiang Song
Author_Institution :
Sch. of Comput., Nat. Univ. of Defense Technol., Changsha, China
Volume :
61
Issue :
4
fYear :
2014
fDate :
Aug. 2014
Firstpage :
1889
Lastpage :
1893
Abstract :
The total ionizing dose effect is experimentally investigated on the electrical characteristics of low on/off switching ratio TiO2 memristive memories for the first time. The 60Co γ-ray irradiation reduces the dispersion of the I-V curves, the resistances and the switch voltages, but the degradations of parameters have no impact on the data storage and reading/writing operations, indicating great stability to the irradiation and potential to the space applications. Furthermore, the low on/off switching ratio devices are ideal samples for the investigations of radiation effect on the memristive devices due to their observable parameter variation post the irradiation exposure.
Keywords :
integrated memory circuits; radiation effects; titanium compounds; I-V curves; TiO2; data storage; memristive devices; memristive memories; radiation effect; total ionizing dose effect; Electrical resistance measurement; Memristors; Metals; Radiation effects; Resistance; Switches; Voltage measurement; ${rm TiO}_{2}$ ; Memristive memory; radiation effects; total ionizing dose;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2014.2318298
Filename :
6841650
Link To Document :
