Planar MOSFET devices on paper substrate using graphene oxide film as gate dielectric

This paper deals with a novel MOSFET device on paper substrate. Such transistor uses poly(3-hexylthiophene) (P3HT) as p-type,organic semiconductor as channel and a film of graphene oxide (GO) as the gate dielectric material. The P3HT and the GO were used as inks in chloroform and aqueous solutions, respectively. Planar top gate and bottom gate MOSFET devices were fabricated. Preliminary results show a quadratic behavior of the drain current Id as a function of the gate-to-source voltage (Vgs).