Title :
Evaluation of HBT device linearity using advanced measurement techniques
Author :
Buisman, Koen ; de Vreede, Leo C. N. ; Marchetti, Mirco ; van der Heijden, Mark P. ; Zampardi, P.J.
Author_Institution :
Electron. Res. Lab., Delft Univ. of Technol., Delft, Netherlands
Abstract :
With this work we address the linearity of HBT devices when operated at their optimum bias and matching conditions at baseband, fundamental and second harmonic. Using active harmonic load pull and pulsed I-V / s-parameter device characterization, the intrinsic linearity properties of SiGe and III-V based HBT devices are evaluated and compared. From this exercise the bias dependent Cbc behavior is identified as key differentiator for the linearity of the different technologies.
Keywords :
Ge-Si alloys; III-V semiconductors; S-parameters; heterojunction bipolar transistors; semiconductor device measurement; HBT device linearity; III-V based HBT devices; S-parameter device characterization; SiGe; active harmonic load pull; advanced measurement techniques; baseband; linearity properties; matching conditions; optimum bias conditions; pulsed I-V; second harmonic; Baseband; Harmonic analysis; Heterojunction bipolar transistors; Linearity; Optimization; Performance evaluation; Silicon germanium;
Conference_Titel :
Microwave Conference (EuMC), 2013 European
Conference_Location :
Nuremberg
