Hybrid measurement-based extraction of consistent large-signal models for microwave FETs

This paper discusses a procedure to extract large-signal models for microwave transistors. By using experimental data, which not necessarily reflect the actual operating conditions, accurate large-signal models, suitable for CAD tools and working at high frequencies, can be obtained by combining direct extraction of basic parameters and numerical optimization. The idea consists of linking the model parameters directly to experimental data. In this way the extraction procedure is sped up. Examples of large-signal models for GaAs and GaN transistors are reported.