• DocumentCode
    65574
  • Title

    Systematic Analysis of the Photocurrent Spectroscopy on InGaN/GaN Blue Light-Emitting Diodes

  • Author

    Dong-Soo Shin ; Jong-Ik Lee ; Jong-In Shim

  • Author_Institution
    Dept. of Appl. Phys., Hanyang Univ., Ansan, South Korea
  • Volume
    49
  • Issue
    12
  • fYear
    2013
  • fDate
    Dec. 2013
  • Firstpage
    1062
  • Lastpage
    1065
  • Abstract
    We demonstrate a method of systematic analysis for the photocurrent spectroscopy on InGaN/GaN light-emitting diodes (LEDs). By normalizing photocurrent data at a photon energy of 3.2 eV for blue LEDs, we show that accurate comparison of active quantum wells is possible. Bias-dependent photocurrent measurements reveal that there are fixed points in photocurrent data from which an effective bandgap energy can be determined. The method presented in this paper can be useful when one needs to compare the LEDs fabricated at different times or by different processes.
  • Keywords
    III-V semiconductors; energy gap; gallium compounds; indium compounds; light emitting diodes; photoconductivity; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; LED; active quantum wells; bandgap energy; bias-dependent photocurrent measurements; blue light emitting diodes; electron volt energy 3.2 eV; photocurrent spectroscopy; Absorption; Gallium nitride; Light emitting diodes; Photoconductivity; Photonic band gap; Photonics; Semiconductor device measurement; Photocurrent spectroscopy; Stokes shift; joint density of states; light-emitting diode;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2013.2287100
  • Filename
    6646228