DocumentCode
65574
Title
Systematic Analysis of the Photocurrent Spectroscopy on InGaN/GaN Blue Light-Emitting Diodes
Author
Dong-Soo Shin ; Jong-Ik Lee ; Jong-In Shim
Author_Institution
Dept. of Appl. Phys., Hanyang Univ., Ansan, South Korea
Volume
49
Issue
12
fYear
2013
fDate
Dec. 2013
Firstpage
1062
Lastpage
1065
Abstract
We demonstrate a method of systematic analysis for the photocurrent spectroscopy on InGaN/GaN light-emitting diodes (LEDs). By normalizing photocurrent data at a photon energy of 3.2 eV for blue LEDs, we show that accurate comparison of active quantum wells is possible. Bias-dependent photocurrent measurements reveal that there are fixed points in photocurrent data from which an effective bandgap energy can be determined. The method presented in this paper can be useful when one needs to compare the LEDs fabricated at different times or by different processes.
Keywords
III-V semiconductors; energy gap; gallium compounds; indium compounds; light emitting diodes; photoconductivity; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; LED; active quantum wells; bandgap energy; bias-dependent photocurrent measurements; blue light emitting diodes; electron volt energy 3.2 eV; photocurrent spectroscopy; Absorption; Gallium nitride; Light emitting diodes; Photoconductivity; Photonic band gap; Photonics; Semiconductor device measurement; Photocurrent spectroscopy; Stokes shift; joint density of states; light-emitting diode;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2013.2287100
Filename
6646228
Link To Document