DocumentCode :
65574
Title :
Systematic Analysis of the Photocurrent Spectroscopy on InGaN/GaN Blue Light-Emitting Diodes
Author :
Dong-Soo Shin ; Jong-Ik Lee ; Jong-In Shim
Author_Institution :
Dept. of Appl. Phys., Hanyang Univ., Ansan, South Korea
Volume :
49
Issue :
12
fYear :
2013
fDate :
Dec. 2013
Firstpage :
1062
Lastpage :
1065
Abstract :
We demonstrate a method of systematic analysis for the photocurrent spectroscopy on InGaN/GaN light-emitting diodes (LEDs). By normalizing photocurrent data at a photon energy of 3.2 eV for blue LEDs, we show that accurate comparison of active quantum wells is possible. Bias-dependent photocurrent measurements reveal that there are fixed points in photocurrent data from which an effective bandgap energy can be determined. The method presented in this paper can be useful when one needs to compare the LEDs fabricated at different times or by different processes.
Keywords :
III-V semiconductors; energy gap; gallium compounds; indium compounds; light emitting diodes; photoconductivity; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; LED; active quantum wells; bandgap energy; bias-dependent photocurrent measurements; blue light emitting diodes; electron volt energy 3.2 eV; photocurrent spectroscopy; Absorption; Gallium nitride; Light emitting diodes; Photoconductivity; Photonic band gap; Photonics; Semiconductor device measurement; Photocurrent spectroscopy; Stokes shift; joint density of states; light-emitting diode;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2013.2287100
Filename :
6646228
Link To Document :
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