Title :
GaN Field Effect Transistors with integrated antennas for THz heterodyne detectors
Author :
Dispenza, M. ; Crispoldi, F. ; Pantellini, A. ; Nanni, A. ; Lanzieri, C. ; Di Gaspare, Alessandra ; Giliberti, Valeria ; Casini, R. ; Ortolani, Michele ; Giovine, Ennio ; Evangelisti, Florestano
Author_Institution :
Selex ES S.p.A., Rome, Italy
Abstract :
We realized GaN based Field Effect Transistors to be used both for direct and heterodyne detection of mm wave / THz signals. Polarization-sensitive, planar antennas were designed and integrated on chip. Device were fabricated relying on an industrial III-V platform. Spectral response in the 0.22-0.38 THz range was acquired. An efficient mixing between gate voltage and drain current was shown.
Keywords :
III-V semiconductors; field effect transistors; gallium compounds; heterodyne detection; planar antennas; wide band gap semiconductors; GaN; THz heterodyne detector; drain current; field effect transistor; frequency 0.22 THz to 0.38 THz; gate voltage; industrial III-V platform; integrated antennas; mm wave signal; planar antenna; polarization-sensitive antenna; spectral response; Antennas; Cutoff frequency; Gallium nitride; HEMTs; Logic gates; MODFETs; Mixers; THz; gallium nitride; heterodyne detection; high-electron mobility transistors; integrated antenna; mixers; terahertz;
Conference_Titel :
Microwave Conference (EuMC), 2013 European
Conference_Location :
Nuremberg
