Title :
Compact high-power GaN oscillator with 2.45 GHz differential output
Author :
Bansleben, Christian ; Heinrich, Wolfgang
Author_Institution :
Ferdinand-Braun-Inst. (FBH), Leibniz-Inst. fuer Hoechstfrequenztechnik, Berlin, Germany
Abstract :
This paper describes a very small 2.45 GHz high power oscillator with differential outputs. A pair of GaN HEMTs delivers 42 W of output power at 39 % efficiency. Easy load matching is enabled by the topology. The footprint of the circuit amounts to only 11 cm2.
Keywords :
III-V semiconductors; UHF oscillators; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT; UHF oscillators; frequency 2.45 GHz; high-power oscillator; load matching; power 42 W; Gallium nitride; HEMTs; Impedance; Logic gates; MODFETs; Oscillators; Power generation; GaN; differential; power oscillator;
Conference_Titel :
Microwave Conference (EuMC), 2013 European
Conference_Location :
Nuremberg
