• DocumentCode
    655771
  • Title

    Compact high-power GaN oscillator with 2.45 GHz differential output

  • Author

    Bansleben, Christian ; Heinrich, Wolfgang

  • Author_Institution
    Ferdinand-Braun-Inst. (FBH), Leibniz-Inst. fuer Hoechstfrequenztechnik, Berlin, Germany
  • fYear
    2013
  • fDate
    6-10 Oct. 2013
  • Firstpage
    818
  • Lastpage
    821
  • Abstract
    This paper describes a very small 2.45 GHz high power oscillator with differential outputs. A pair of GaN HEMTs delivers 42 W of output power at 39 % efficiency. Easy load matching is enabled by the topology. The footprint of the circuit amounts to only 11 cm2.
  • Keywords
    III-V semiconductors; UHF oscillators; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT; UHF oscillators; frequency 2.45 GHz; high-power oscillator; load matching; power 42 W; Gallium nitride; HEMTs; Impedance; Logic gates; MODFETs; Oscillators; Power generation; GaN; differential; power oscillator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2013 European
  • Conference_Location
    Nuremberg
  • Type

    conf

  • Filename
    6686782
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=655771