DocumentCode :
655895
Title :
Statistical harmonic load termination analysis of switch-mode power amplifiers employing bandpass-pulse-length modulation
Author :
Krause, Stephen ; Maroldt, S. ; Zech, Christian ; Quay, Ruediger ; Hein, M.A.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany
fYear :
2013
fDate :
6-10 Oct. 2013
Firstpage :
1311
Lastpage :
1314
Abstract :
This paper presents a method to determine optimum load impedances from a statistical analysis of a harmonic load pull simulation for a switch-mode power amplifier fed with a bandpass-pulse-length modulated signal. The variability of the duty cycle caused by the modulation was taken into account. Thereby, the crucial impact of the phase angle of the filter input reflection coefficient on the achievable efficiency is shown. The simulation was carried out for a 0.25μm gate length GaN based current-switching power amplifier. Based on the simulation results, a microstrip line network working as reconstruction filter was designed and fabricated. The demonstrator comprising the switch-mode power amplifier monolithic microwave integrated circuit and reconstruction filter achieved a drain efficiency and RF output power of up to 71.1% and 36.7dBm (4.6 W), respectively, over a frequency range from 870MHz to 930 MHz.
Keywords :
III-V semiconductors; band-pass filters; electric impedance; gallium compounds; microstrip lines; microwave integrated circuits; power amplifiers; statistical analysis; wide band gap semiconductors; GaN; RF output power; bandpass-pulse-length modulated signal; current-switching power amplifier; drain efficiency; duty cycle; filter input reflection coefficient; frequency 870 MHz to 930 MHz; gate length; harmonic load pull simulation; microstrip line network; optimum load impedances; phase angle; reconstruction filter; size 0.25 mum; statistical analysis; switch-mode power amplifier monolithic microwave integrated circuit; Frequency modulation; Gallium nitride; Harmonic analysis; Impedance; Microwave circuits; Transistors; GaN; bandpass-RF pulse length modulation; class-S; switch-mode amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2013 European
Conference_Location :
Nuremberg
Type :
conf
Filename :
6686906
Link To Document :
بازگشت