• DocumentCode
    655904
  • Title

    Lateral mode intrinsically switchable barium titanate film bulk acoustic wave resonators

  • Author

    Lee, Victor ; Sis, Seyit Ahmet ; Seungku Lee ; Mortazawi, Amir ; Xinen Zhu

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2013
  • fDate
    6-10 Oct. 2013
  • Firstpage
    1347
  • Lastpage
    1350
  • Abstract
    This paper presents the design, simulation results, and measurement results of lateral mode intrinsically switchable bulk acoustic wave resonators based on the ferroelectric material barium titanate. Lateral dimensions of these devices determine their resonance frequencies, significantly simplifying the fabrication of monolithic multi-frequency circuits. By applying a dc bias, the resonance modes can be excited and the resonators are switched on. Resonator designs with parallel plate electrodes and interdigitated electrodes are demonstrated and have resonance frequencies from 160 MHz to 1.67 GHz. When the dc bias is removed, the resonances are switched off and the devices behave as capacitors.
  • Keywords
    acoustic resonators; barium compounds; bulk acoustic wave devices; electrodes; electrostriction; ferroelectric thin films; BaTiO3; barium titanate film; ferroelectric material; frequency 160 MHz to 1.67 GHz; interdigitated electrodes; lateral mode intrinsically switchable bulk acoustic wave resonators; monolithic multifrequency circuits; parallel plate electrodes; resonator designs; Acoustic waves; Electric fields; Electrodes; Fabrication; Resonant frequency; Switches; Voltage measurement; barium titanate; contour mode resonators; electrostriction; ferroelectric devices; interdigital transducers; radio frequency microelectromechanical systems (RF MEMS);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2013 European
  • Conference_Location
    Nuremberg
  • Type

    conf

  • Filename
    6686915