DocumentCode
655904
Title
Lateral mode intrinsically switchable barium titanate film bulk acoustic wave resonators
Author
Lee, Victor ; Sis, Seyit Ahmet ; Seungku Lee ; Mortazawi, Amir ; Xinen Zhu
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear
2013
fDate
6-10 Oct. 2013
Firstpage
1347
Lastpage
1350
Abstract
This paper presents the design, simulation results, and measurement results of lateral mode intrinsically switchable bulk acoustic wave resonators based on the ferroelectric material barium titanate. Lateral dimensions of these devices determine their resonance frequencies, significantly simplifying the fabrication of monolithic multi-frequency circuits. By applying a dc bias, the resonance modes can be excited and the resonators are switched on. Resonator designs with parallel plate electrodes and interdigitated electrodes are demonstrated and have resonance frequencies from 160 MHz to 1.67 GHz. When the dc bias is removed, the resonances are switched off and the devices behave as capacitors.
Keywords
acoustic resonators; barium compounds; bulk acoustic wave devices; electrodes; electrostriction; ferroelectric thin films; BaTiO3; barium titanate film; ferroelectric material; frequency 160 MHz to 1.67 GHz; interdigitated electrodes; lateral mode intrinsically switchable bulk acoustic wave resonators; monolithic multifrequency circuits; parallel plate electrodes; resonator designs; Acoustic waves; Electric fields; Electrodes; Fabrication; Resonant frequency; Switches; Voltage measurement; barium titanate; contour mode resonators; electrostriction; ferroelectric devices; interdigital transducers; radio frequency microelectromechanical systems (RF MEMS);
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2013 European
Conference_Location
Nuremberg
Type
conf
Filename
6686915
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