Title :
94-GHz Load pull measurements of SiGe HBT by extracting output power density in W-Band
Author :
Hasnaoui, I. ; Canderle, E. ; Chevalier, P. ; Gloria, Daniel ; Gaquiere, Christopher
Author_Institution :
Microwave Power Devices Group, IEMN, Villeneuve-d´Ascq, France
Abstract :
In this paper, we present a W-Band load pull test bench used to improve a characterization of Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT). High accuracy is obtained in Load-pull measurements at 94 GHz on last-generation SiGe HBTs by extracting the input reflection hot S-parameter (S´11), in order to understand the mechanisms of power behavior in the presence of millimeter-wave excitations. The device under test (0.12×4.9μm2) was characterized under large signal load pull showing attractive performance for power amplifier design. A state-of-the-art power density of 22.26 mW/μm2 has been extracted at 94 GHz.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave power amplifiers; semiconductor device testing; semiconductor materials; SiGe; W-Band load pull test bench; frequency 94 GHz; input reflection hot S-parameter; large signal pull load pull; load pull measurements; millimeter-wave excitations; output power density extraction; power amplifier design; power behavior mechanisms; silicon germanium heterojunction bipolar transistor; Density measurement; Heterojunction bipolar transistors; Power amplifiers; Power generation; Power measurement; Silicon germanium; BiCMOS; Load Pull; SiGe HBTs; W-band; hot S-parameter;
Conference_Titel :
Microwave Conference (EuMC), 2013 European
Conference_Location :
Nuremberg
