Title :
L-band AlGaN/GaN power amplifier with protection against load mismatch
Author :
van Heijningen, M. ; van der Bent, Gijs ; van der Houwen, E.H. ; Chowdhary, Amitabh ; van Vliet, Frank E.
Author_Institution :
TNO, The Hague, Netherlands
Abstract :
Solid-state power amplifiers need protection at the output to handle high reflections due to mismatch. Normally this is implemented by using a ferrite-based isolator. These are however large and bulky components. This paper presents a Gallium-Nitride power amplifier module with automatic protection against large reflections based on fold-back protection, by sensing the reflected power. Measurements have been performed on a 100 W L-band power amplifier module at full reflection (short at the output) without damage to the amplifier. The reaction time of the protection mechanism is less than 0.5 μs.
Keywords :
III-V semiconductors; aluminium compounds; ferrites; gallium compounds; microwave isolators; power amplifiers; wide band gap semiconductors; AlGaN-GaN; L-band power amplifier; ferrite-based isolator; fold-back protection; load mismatch; power 100 W; reaction time; reflected power; solid-state power amplifiers; Gallium nitride; MMICs; Power amplifiers; Power dissipation; Power generation; Power measurement; Transistors; Gallium nitride; High power amplifiers; MMICs;
Conference_Titel :
Microwave Conference (EuMC), 2013 European
Conference_Location :
Nuremberg
