Title :
Nonlinear transistor modeling for industrial 0.25-µm AlGaN-GaN HEMTs
Author :
Chang, Carole ; Di Giacomo-Brunel, Valeria ; Floriot, D. ; Grunenputt, J. ; Hosch, M. ; Blanck, H.
Author_Institution :
United Monolithic Semicond. SAS, Villebon-sur-Yvette, France
Abstract :
Industrial microwave technologies presents specific modeling issues. Foundries have to provide design kits containing linear and nonlinear models which are multi-purpose, scalable and as accurate as possible. This can become quite challenging for technologies presenting complex nonlinear phenomena, such as GaN-based devices. Good trade-off among accuracy, numerical efficiency and generality can be anyway achieved, as shown in the paper.
Keywords :
foundries; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; GaN; complex nonlinear phenomena; foundry; gallium nitride-based devices; industrial HEMT; industrial microwave technology; nonlinear transistor modeling; numerical efficiency; size 0.25 mum; Current measurement; Load modeling; Logic gates; Mathematical model; Numerical models; Temperature measurement; Transistors; GaN-Based Devices; Microwave Amplifier; Nonlinear Transistor Modeling;
Conference_Titel :
Microwave Conference (EuMC), 2013 European
Conference_Location :
Nuremberg
