DocumentCode :
655944
Title :
A 159–169 GHz frequency source with 1.26 mW peak output power in 65 nm CMOS
Author :
Khamaisi, Bassam ; Socher, Eran
Author_Institution :
School of Electrical Engineering, Tel-Aviv University, Israel
fYear :
2013
fDate :
6-10 Oct. 2013
Firstpage :
1507
Lastpage :
1510
Abstract :
This paper present a D-band signal source based on a 2nd harmonic generation of a differential Colpitts VCO that fabricated on 65 nm CMOS process. It covers a frequency range from 159 GHz to 169 GHz with a total tuning range of 5.8%. It provides −3.8 dBm at 163.5 GHz with a nominal supply voltage of 1.2 V while consuming a DC current of 25 mA and with power efficiency of 1.38%; increasing the supply voltage to 2 V with consuming a DC current of 44 mA achieves +1 dBm at 164.6 GHz with efficiency of 1.43%. The source performance in terms of output power, tuning range and efficiency is the best that reported on CMOS at this frequency range.
Keywords :
CMOS; Colpitts topology; D-Band; Millimeter waves; Voltage Controlled Oscillator (VCO);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2013 European
Conference_Location :
Nuremberg, Germany
Type :
conf
Filename :
6686955
Link To Document :
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