Title :
Spectroscopic characterization of a 2.3µm GaInAsSb-based VCSEL structure
Author :
Chai, G.M.T. ; Hosea, T.J.C.
Author_Institution :
Ibnu Sina Inst. for Fundamental Sci. Studies, Univ. Teknol. Malaysia, Johor Bahru, Malaysia
Abstract :
A vertical-cavity surface-emitting laser (VCSEL) structure, for 2.3μm gas sensing, is investigated with photo-modulated reflectance (PR) as functions of incidence angle and temperature. Heating from 9K to 300K tunes the quantum well (QW) transitions relative to the VCSEL cavity mode (CM). The QW ground-state comes into resonance with the CM at 220±2K and the QW-CM offset at 300K is 21meV. These results are compared with those of operating devices.
Keywords :
III-V semiconductors; electro-optical effects; gallium arsenide; gallium compounds; gas sensors; ground states; indium compounds; infrared detectors; laser cavity resonators; quantum well lasers; reflectivity; remote sensing by laser beam; semiconductor quantum wells; surface emitting lasers; GaInAsSb; QW ground state; VCSEL cavity mode; VCSEL structure; electron volt energy 21 meV; gas sensing; heating; incidence angle; photomodulated reflectance; quantum well transitions; spectroscopic characterization; temperature 9 K to 300 K; temperature effects; vertical cavity surface emitting laser; wavelength 2.3 mum; Scholarships; Silicon; VCSEL; mid-infrared; photo-modulated reflectance; spectroscopy;
Conference_Titel :
Photonics (ICP), 2013 IEEE 4th International Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4673-6073-9
DOI :
10.1109/ICP.2013.6687069
