DocumentCode
65611
Title
SiGe HBT Technology Based on a 0.13- 
Process Featuring an 
of 325 GHz
Author
Hashimoto, Toshikazu ; Tokunaga, Kyoya ; Fukumoto, K. ; Yoshida, Yutaka ; Satoh, H. ; Kubo, Momoji ; Shima, Akio ; Oda, K.
Author_Institution
Micro Device Div., Hitachi, Ltd., Tokyo, Japan
Volume
2
Issue
4
fYear
2014
fDate
Jul-14
Firstpage
50
Lastpage
58
Abstract
A self-aligned SiGe HBT technology achieving a cutoff frequency (fT) of 253 GHz was developed using a selective SiGe epitaxial growth process. Germanium concentration in an i-SiGe layer just under a p+ intrinsic base region was raised to 27.4% to improve fT, and boron concentration in the intrinsic base region reached 2.4 × 1020 cm-3 as a deposition to maintain a breakdown voltage of 1.5 V. A 0.13-μm SiGe BiCMOS technology geometrically advanced from an earlier 0.18-μm version shrinks the emitter width from 0.2 to 0.12 μm to reduce collector-base capacitance and base resistance. It achieves a maximum oscillation frequency (fMAX) of 325 GHz. This technology can be applied to optical and mm wave communication systems.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; epitaxial growth; heterojunction bipolar transistors; semiconductor growth; submillimetre wave transistors; SiGe; SiGe BiCMOS technology; base resistance; boron concentration; breakdown voltage; collector-base capacitance; frequency 253 GHz; frequency 325 GHz; germanium concentration; i-SiGe layer; p+ intrinsic base region; selective SiGe epitaxial growth; self-aligned SiGe HBT technology; size 0.13 mum; voltage 1.5 V; Boron; Epitaxial growth; Germanium; Heterojunction bipolar transistors; Resistance; Silicon; Silicon germanium; Bipolar junction transistors; LP-CVD; SiGe HBT; SiGe selective epitaxial growth; selfaligned structure;
fLanguage
English
Journal_Title
Electron Devices Society, IEEE Journal of the
Publisher
ieee
ISSN
2168-6734
Type
jour
DOI
10.1109/JEDS.2014.2315854
Filename
6783783
Link To Document