• DocumentCode
    656304
  • Title

    A nanosecond current pulse driver for light emitting diode

  • Author

    Tse-Ju Liao ; Yu-Chen Liu ; Chern-Lin Chen

  • Author_Institution
    Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2013
  • fDate
    3-6 Nov. 2013
  • Firstpage
    299
  • Lastpage
    303
  • Abstract
    High-intensity and short-duration light is necessary in many applications such as particle image velocimetry and light communication. Using nanosecond current pulse to drive LED or laser diode can generate such light to achieve higher efficiency. In nanosecond current pulse driver design, parasitic inductance effect is a big challenge. Parasitic inductance and voltage across it influence current change rate considerably. The proposed circuit uses source switching and current mirror topology to increase on/off speed of power MOSFET to achieve nanosecond current pulse. It reduces parasitic inductance effect and also overcomes the bandwidth limitation of conventional pulse current driver. Experiments show the proposed circuit provides 390mA current pulse with 40ns width.
  • Keywords
    driver circuits; inductance; light emitting diodes; power MOSFET; LED; current mirror topology; laser diode; light emitting diode; nanosecond current pulse driver; parasitic inductance effect; power MOSFET; source switching; Light emitting diodes; Logic gates; Modulation; Noise; Simulation; Switching circuits; Light emitting diode; oscillator; pulse current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future Energy Electronics Conference (IFEEC), 2013 1st International
  • Conference_Location
    Tainan
  • Print_ISBN
    978-1-4799-0071-8
  • Type

    conf

  • DOI
    10.1109/IFEEC.2013.6687520
  • Filename
    6687520