DocumentCode
656386
Title
Resonance analysis for DC-side laminated bus-bar of a high speed switching circuit
Author
Hino, Aya ; Wada, Kazuyoshi
Author_Institution
Tokyo Metropolitan Univ., Tokyo, Japan
fYear
2013
fDate
3-6 Nov. 2013
Firstpage
751
Lastpage
756
Abstract
Recently, research and development of next-generation power semiconductors, such as SiC and GaN, have been done, then high speed switching inverter circuit has also been discussed. On the other hand, high-di/dt and high-dv/dt switching operation may cause electromagnetic noise and surge voltage. Therefore it is important to know and calculate stray inductance of a DC-side bus-bar inductance. This paper proposes a laminated bus-bar design procedure in consideration of the bus-bar inductance and capacitance. It is confirm that the validity of the design procedure will be shown using the buck chopper circuit rated at 400 V, 70 A.
Keywords
busbars; capacitance; choppers (circuits); circuit resonance; electromagnetic interference; inductance; laminations; power semiconductor switches; resonant invertors; surge protection; DC side laminated busbar inductance; buck chopper circuit; busbar capacitance; current 70 A; di/dt switching operation; dv/dt switching operation; electromagnetic noise; next generation power semiconductor; resonance analysis; stray inductance calculation; surge voltage; switching inverter circuit; voltage 400 V; Conductors; DVD; Integrated circuit modeling; MOSFET; Magnetic resonance; Materials; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Future Energy Electronics Conference (IFEEC), 2013 1st International
Conference_Location
Tainan
Print_ISBN
978-1-4799-0071-8
Type
conf
DOI
10.1109/IFEEC.2013.6687602
Filename
6687602
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