DocumentCode :
656388
Title :
A real time Vce measurement issues for high power IGBT module in converter operation
Author :
Ghimire, Pramod ; Ruiz de Vega, Angel ; Munk-Nielsen, Stig ; Rannestad, Bjorn ; Thogersen, Paul Bach
Author_Institution :
Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark
fYear :
2013
fDate :
3-6 Nov. 2013
Firstpage :
761
Lastpage :
766
Abstract :
A real time on-state collector-emitter (Vce) voltage monitoring is sensitive due to a stray inductance and a parasitic capacitance inside high power IGBT modules. An additional circuit used to monitor the on-state Vce introduces small current into the module. Though the current is low in comparison to the converter current, the effect on gate driving signals cannot be neglected during worst case switching operations. The worst case situation is occurred during turn-on and turn-off period of the switches at low on-time of the IGBT. Furthermore, during this period, when the common terminal of the measurement circuit is not in contact properly, the consequences of the error will be higher by deteriorating the gate driving signals. This type of error may occur due to the vibration or during implementation of the measurement circuit in the converter. This paper presents the influence of the error into the measurement and shows the measurement of current and voltage transients during the converter operation. The selection of the components for the measurement circuit is also discussed. The effect in gate driving signals with and without the error events are presented. Finally, a real time Vce measurement of IGBT module in the converter operation is presented.
Keywords :
capacitance; inductance; insulated gate bipolar transistors; switching convertors; transients; vibrations; current transient measurement; gate driving signal; high power IGBT module; inductance; parasitic capacitance; real time on-state collector-emitter voltage monitoring; switching converter operation; vibration; voltage transient measurement; Current measurement; Feeds; Insulated gate bipolar transistors; Monitoring; Switches; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future Energy Electronics Conference (IFEEC), 2013 1st International
Conference_Location :
Tainan
Print_ISBN :
978-1-4799-0071-8
Type :
conf
DOI :
10.1109/IFEEC.2013.6687604
Filename :
6687604
Link To Document :
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