DocumentCode :
656559
Title :
Design of a high gain power amplifier for 77 GHz radar automotive applications in 65-nm CMOS
Author :
Hoa Thai Duong ; Hoang Viet Le ; Anh Trong Huynh ; Evans, Robin J. ; Skafidas, E.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Melbourne, Melbourne, VIC, Australia
fYear :
2013
fDate :
6-8 Oct. 2013
Firstpage :
65
Lastpage :
68
Abstract :
A 77 GHz power amplifier (PA) fabricated in a standard CMOS 65-nm process for radar automotive applications is presented. Based on passive transformer-coupled architectures, a high gain PA has been developed for a 76-77 GHz frequency range. The proposed PA achieves a 18.5 dB gain with output compression point (OP1dB) of +9.5 dBm and a saturated output power of +10.5 dBm for a 1.2 V supply. The isolation between input and output ports is better than 42 dB, and peak power added efficiency (PAE) is 7.1 %. Return losses at the input and output ports are less than -10 dB across the 67-100 GHz band. The PA has a compact size of 0.4 × 0.85 mm2.
Keywords :
CMOS integrated circuits; millimetre wave radar; power amplifiers; road vehicle radar; CMOS; frequency 67 GHz to 100 GHz; gain 18.5 dB; high gain power amplifier design; passive transformer-coupled architectures; power added efficiency; radar automotive; size 65 nm; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Gain; Impedance matching; Power amplifiers; Power generation; Radar; CMOS; millimeter-wave; power amplifiers; transformer-based;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location :
Nuremberg
Type :
conf
Filename :
6687786
Link To Document :
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