DocumentCode :
656567
Title :
Ku-band high output power multiphase rotary travelling-wave VCO in SiGe BiCMOS
Author :
Ansari, Kimia T. ; Ross, Tyler N. ; Plett, Calvin
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, ON, Canada
fYear :
2013
fDate :
6-8 Oct. 2013
Firstpage :
97
Lastpage :
100
Abstract :
In this paper, a multiphase 18 GHz voltage-controlled oscillator (VCO) based on the rotary traveling-wave principle is presented. Using a 0.25 μm BiCMOS process, the fabricated bipolar VCO achieves a tuning range of 700 MHz and a phase noise of -98 dBc/Hz at 1 MHz offset from the carrier frequency. The oscillator shows high output power of -5.5 dBm and it provides 8 different phases. The VCO core consumes 13.5 mA of current. The performance of our proposed VCO is comparable with other published CMOS VCOs operating at the same frequency, but provides more phases and consumes lower current.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; microwave oscillators; voltage-controlled oscillators; BiCMOS process; Ku-band; bipolar VCO; current 13.5 mA; frequency 1 MHz; frequency 18 GHz; frequency 700 MHz; multiphase rotary traveling-wave VCO; multiphase voltage-controlled oscillator; size 0.25 mum; BiCMOS integrated circuits; CMOS integrated circuits; Capacitance; Phase noise; Power generation; Voltage-controlled oscillators; BiCMOS; Ku-band; Rotary travelling-wave oscillator; multiphase; voltage-controlled oscillator (VCO);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location :
Nuremberg
Type :
conf
Filename :
6687794
Link To Document :
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