High-speed SiGe BiCMOS technologies for applications beyond 100 GHz

Author

Fischer, G.G. ; Heinemann, B. ; Kaynak, Mehmet ; Rucker, Holger

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

172

Lastpage

175

Abstract

This review discusses recent developments of high-speed SiGe HBT technologies and their application to integrated circuits with operation frequencies above 100 GHz. SiGe HBTs with maximum oscillation frequencies up to 500 GHz and CML ring oscillator delay times of 2.0 ps are now possible. The integration capability of the technologies is demonstrated with examples of on-chip 100 GHz RF-MEMS switches and 130 GHz antenna. To verify not only performance but also reliability of the high-speed HBTs the results of long-term mixed-mode stress tests are presented. Finally, examples of 240 GHz LNAs and 120 GHz transceivers demonstrate the circuit performance of advanced SiGe technologies.

Keywords

BiCMOS integrated circuits; current-mode logic; heterojunction bipolar transistors; high-speed integrated circuits; integrated circuit reliability; microswitches; oscillators; transceivers; CML ring oscillator delay times; LNA; RF-MEMS switches; antenna; frequency 100 GHz; frequency 120 GHz; frequency 240 GHz; high-speed BiCMOS technology; high-speed HBT reliability; high-speed HBT technology; integrated circuits; integration capability; long-term mixed-mode stress test; operation frequency; oscillation frequency; transceivers; Antennas; BiCMOS integrated circuits; Gain; Heterojunction bipolar transistors; Radio frequency; Silicon germanium; Stress; Heterojunction bipolar transistors; RF MEMS; millimeter wave bipolar integrated circuits; millimeter wave devices; on-chip antenna; silicon bipolar/BiCMOS technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687813