A passive x-band double balanced mixer utilizing diode connected SiGe HBTs

Author

Michaelsen, Rasmus ; Johansen, Tom ; Tamborg, Kjeld ; Zhurbenko, Vitaliy

Author_Institution

Dept. of Electr. Eng., Tech. Univ. of Denmark, Lyngby, Denmark

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

188

Lastpage

191

Abstract

In this paper, a passive double balanced mixer in SiGe HBT technology is presented. Due to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode connected HBTs. The mixer is optimized for use in doppler radars and is highly linear with 1 dB compression point above 12 dBm. The conversion gain at the center frequency of 8.5 GHz is -9.8 dB with an LO drive level of 15 dBm. The mixer is very broadband with 3 dB bandwidth from 7-12 GHz covering the entire X-band. The LO-IF and RF-IF isolation is better than 46 dB and 36 dB, respectively, in the entire band of operation.

Keywords

Doppler radar; Ge-Si alloys; heterojunction bipolar transistors; mixers (circuits); Doppler radars; HBT technology; LO-IF isolation; RF-IF isolation; X-band; center frequency; compression point; conversion gain; drive level; passive double balanced mixer; passive mixing elements; passive x-band double balanced mixer; Frequency measurement; Impedance matching; Loss measurement; Mixers; Noise; Power measurement; Radio frequency; MMIC; Mixer; double balanced; passive devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687817