Electro-Thermal-Stress analysis of a LDMOS FET Breakdown under High Power Microwave pulses

Author

Zhang Cheng ; Wei-Feng Zhou ; Liang Zhou ; Wen-Yan Yin

Author_Institution

Key Lab. of Minist. of Educ. of Design & Electromagn. Compatibility of High Speed Electron. Syst., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

232

Lastpage

235

Abstract

This paper presents thermal and stress breakdown effects in a LDMOS FET under the impact of High Power Microwave pulses. Experimental investigations of the LDMOS FET-based power amplifier (PA) are performed under HPM pulses. The Electro-Thermal- Stress (E-T-S) breakdown of the device is observed. To characterize temperature and stress distribution of the LDMOS FET, we developed a physical electro-thermal-stress model using time-domain finite-element method. Simulations are performed and compared with measurements. This research can provide useful knowledge for understanding the reliability of RF power devices.

Keywords

electromechanical effects; finite element analysis; microwave power amplifiers; power MOSFET; semiconductor device breakdown; temperature distribution; time-domain analysis; LDMOS FET breakdown; RF power device; electro-thermal-stress analysis; high power microwave pulse; power amplifier; stress breakdown effect; stress distribution; thermabreakdown effect; time domain finite element method; Electric breakdown; Field effect transistors; Finite element analysis; Mathematical model; Stress; Temperature measurement; Thermal stresses; Breakdown; Electro-Thermal- Stress; LDMOS FET; Power Amplifiers; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687828