A low phase error X-band eight-channel SiGe PIN diode phased array receiver

Author

Yu You ; Siqi Zhu ; Sah, Sunil ; Deukhyoun Heo ; Warnick, Karl F.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

268

Lastpage

271

Abstract

A low phase error X-band eight-channel SiGe PIN diode phased array receiver for 9.5-11.5 GHz application has been proposed and fabricated in a commercial 0.18-μm SiGe BiCMOS process. High performance PIN diode switches used in phase shifters ensure low phase error for all phase states. The 9.5-11.5 GHz receiver, which consists of LNAs, VGAs, PIN diode passive phase shifters and active combiners, achieves over 10 dB measured average gain, less than 5 dB NF (at max. gain and ref. phase state) per channel. The RMS gain error is less than 1 dB and the RMS phase error is less than 4.8° at 9.5-11.5 GHz for all phase states. To the authors´ best knowledge, this receiver achieves the lowest RMS phase error in multi-channel X-band phased array receivers using passive phase shifting method.

Keywords

BiCMOS integrated circuits; low noise amplifiers; p-i-n diodes; phase shifters; silicon compounds; BiCMOS process; LNAs; PIN diode passive phase shifters; RMS phase error; SiGe; VGAs; X-band eight-channel SiGe PIN diode; active combiners; frequency 9.5 GHz to 11.5 GHz; low phase error; multichannel X-band phased array receivers; passive phase shifting method; size 0.18 mum; Arrays; BiCMOS integrated circuits; Gain; PIN photodiodes; Phase shifters; Receivers; Silicon germanium; BiCMOS integrated circuits; SiGe PIN diode; phase shifters; phased array; radar; receivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687837