Title :
A 5Gb/s F-band ASK transmitter in 45nm LP CMOS
Author :
Deferm, Noel ; Osorio, Juan F. ; de Graauw, Anton ; Reynaert, Patrick
Author_Institution :
KU Leuven ESAT-MICAS, Leuven, Belgium
Abstract :
This paper presents an F-band direct digital ASK modulation transmitter. A high speed bias current modulator and a large bandwidth power amplifier are key building blocks in this system. The digital PRBS signal is generated by an on chip high speed 9-bit LFSR. A transmitted data rate of 5Gb/s is achieved and the measured peak output power is 6dBm at 110GHz. The peak LO to RF gain is 16dB. Total chip area is 0.5mm2, the active RF area occupies 0.1mm2 and the digital baseband measures 0.01mm2.
Keywords :
CMOS analogue integrated circuits; amplitude shift keying; millimetre wave power amplifiers; radio transmitters; F-band ASK transmitter; F-band direct digital ASK modulation transmitter; LP CMOS; RF gain; bandwidth power amplifier; bit rate 5 Gbit/s; digital PRBS signal; frequency 110 GHz; gain 16 dB; high speed bias current modulator; on chip high speed 9-bit LFSR; peak LO; peak output power; size 45 nm; transmitted data rate; Amplitude shift keying; Baseband; CMOS integrated circuits; Power amplifiers; Radio frequency; Transmitters; ASK; CMOS; F-band; differential design; mm-wave; power amplifier; transmitter;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location :
Nuremberg
