High capacitance ratio RF MEMS dielectric-less switched capacitor

Author

Fall, Mansour ; Fouladi, Siamak ; Domingue, F. ; Dieppedale, C. ; Reig, Benjamin ; Mansour, Raafat R.

Author_Institution

Lab. de Microsystemes et Telecommun., Univ. du Quebec a Trois-Rivieres, Trois-rivières, QC, Canada

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

356

Lastpage

359

Abstract

This paper presents a novel RF-MEMS dielectric-less switched capacitor that exhibits a high capacitance ratio. The proposed design is based on a floating contact element concept that results in a reduced up state capacitance. The switched capacitor was fabricated on 200 mm silicon wafer with an industrial process developed for manufacturing robust and reliable packaged RF MEMS devices. RF Measurements up to 20 GHz were performed on the fabricated device, showing a capacitance ratio higher than 30:1 with a good quality factor over the operating frequency range. This RF MEMS switched capacitor is suitable for adaptive and reconfigurable RF circuits.

Keywords

Q-factor; capacitance; integrated circuit packaging; microswitches; radiofrequency integrated circuits; switched capacitor networks; RF MEMS switched capacitor; RF measurements; RF-MEMS dielectric-less switched capacitor; adaptive RF circuits; capacitance ratio; floating contact element; packaged RF MEMS devices; quality factor; reconfigurable RF circuits; silicon wafer; Capacitance; Capacitors; Electrodes; Micromechanical devices; Optical switches; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687859