DocumentCode
656633
Title
Reliability of nanocrystalline diamond MEMS capacitive switches
Author
Michalas, L. ; Saada, S. ; Koutsoureli, M. ; Mer, C. ; Leuliet, A. ; Martins, Pedro ; Bansropun, S. ; Papaioannou, G. ; Bergonzo, P. ; Ziaei, A.
Author_Institution
Phys. Dept., Univ. of Athens, Athens, Greece
fYear
2013
fDate
6-8 Oct. 2013
Firstpage
364
Lastpage
367
Abstract
A solution to mitigate the dielectric charging and to improve reliability of RF MEMS switches is the replacement of the commonly used dielectrics with others that allow fast draining of the injected charges. One of the materials that have been successfully incorporated is diamond. The present paper presents both the charging and discharging process characteristics in MEMS having nanocrystalline diamond dielectric films. The study is performed by monitoring the charging and discharging current transient in MIM capacitors and the shift of the bias for minimum up state capacitance before and after progressively increasing stressing time tests. The results reveal that diamond is very promising material to improve the device reliability.
Keywords
diamond; dielectric thin films; microswitches; nanostructured materials; reliability; MEMS capacitive switches; MIM capacitors; RF MEMS switches; device reliability; dielectric charging; nanocrystalline diamond dielectric films; stressing time tests; Diamonds; Dielectrics; Films; Micromechanical devices; Microswitches; Radio frequency; Reliability; Diamond; Dielectric Charging; RF MEMS; Reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location
Nuremberg
Type
conf
Filename
6687861
Link To Document