• DocumentCode
    656633
  • Title

    Reliability of nanocrystalline diamond MEMS capacitive switches

  • Author

    Michalas, L. ; Saada, S. ; Koutsoureli, M. ; Mer, C. ; Leuliet, A. ; Martins, Pedro ; Bansropun, S. ; Papaioannou, G. ; Bergonzo, P. ; Ziaei, A.

  • Author_Institution
    Phys. Dept., Univ. of Athens, Athens, Greece
  • fYear
    2013
  • fDate
    6-8 Oct. 2013
  • Firstpage
    364
  • Lastpage
    367
  • Abstract
    A solution to mitigate the dielectric charging and to improve reliability of RF MEMS switches is the replacement of the commonly used dielectrics with others that allow fast draining of the injected charges. One of the materials that have been successfully incorporated is diamond. The present paper presents both the charging and discharging process characteristics in MEMS having nanocrystalline diamond dielectric films. The study is performed by monitoring the charging and discharging current transient in MIM capacitors and the shift of the bias for minimum up state capacitance before and after progressively increasing stressing time tests. The results reveal that diamond is very promising material to improve the device reliability.
  • Keywords
    diamond; dielectric thin films; microswitches; nanostructured materials; reliability; MEMS capacitive switches; MIM capacitors; RF MEMS switches; device reliability; dielectric charging; nanocrystalline diamond dielectric films; stressing time tests; Diamonds; Dielectrics; Films; Micromechanical devices; Microswitches; Radio frequency; Reliability; Diamond; Dielectric Charging; RF MEMS; Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference (EuMIC), 2013 European
  • Conference_Location
    Nuremberg
  • Type

    conf

  • Filename
    6687861