DocumentCode :
656633
Title :
Reliability of nanocrystalline diamond MEMS capacitive switches
Author :
Michalas, L. ; Saada, S. ; Koutsoureli, M. ; Mer, C. ; Leuliet, A. ; Martins, Pedro ; Bansropun, S. ; Papaioannou, G. ; Bergonzo, P. ; Ziaei, A.
Author_Institution :
Phys. Dept., Univ. of Athens, Athens, Greece
fYear :
2013
fDate :
6-8 Oct. 2013
Firstpage :
364
Lastpage :
367
Abstract :
A solution to mitigate the dielectric charging and to improve reliability of RF MEMS switches is the replacement of the commonly used dielectrics with others that allow fast draining of the injected charges. One of the materials that have been successfully incorporated is diamond. The present paper presents both the charging and discharging process characteristics in MEMS having nanocrystalline diamond dielectric films. The study is performed by monitoring the charging and discharging current transient in MIM capacitors and the shift of the bias for minimum up state capacitance before and after progressively increasing stressing time tests. The results reveal that diamond is very promising material to improve the device reliability.
Keywords :
diamond; dielectric thin films; microswitches; nanostructured materials; reliability; MEMS capacitive switches; MIM capacitors; RF MEMS switches; device reliability; dielectric charging; nanocrystalline diamond dielectric films; stressing time tests; Diamonds; Dielectrics; Films; Micromechanical devices; Microswitches; Radio frequency; Reliability; Diamond; Dielectric Charging; RF MEMS; Reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location :
Nuremberg
Type :
conf
Filename :
6687861
Link To Document :
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