DocumentCode :
65664
Title :
Enhanced Ultraviolet Response of 
Photodetectors
Author :
Jun-Dar Hwang ; Din-Han Wu ; Sheng-Beng Hwang
Author_Institution :
Dept. of Electrophys., Nat. Chiayi Univ., Chiayi, Taiwan
Volume :
26
Issue :
11
fYear :
2014
fDate :
1-Jun-14
Firstpage :
1081
Lastpage :
1084
Abstract :
Ultraviolet (UV) response of p-Si/i-ZnO/n-ZnO (p-i-n) heterojunction photodetectors (HPDs) was dramatically enhanced by inserting a thin SiOx layer to form a p-Si/SiOx/ i-ZnO/n-ZnO structure. It was found that the leakage current of p-i-n HPDs is largely reduced by about three orders compared with that of conventional p-n HPDs. Photocurrent measurements show that the UV-generated carriers are first accelerated by the electric field in i-ZnO and then tunnel through the thin SiOx layer instead of being trapped by the interface states at the p-Si/ i-ZnO interface. This increases the UV response and consequently, the UV-to-visible rejection ratio is enhanced from 7 for the p-i-n HPDs without SiOx layer to 112 for the HPDs with SiOx insertion.
Keywords :
II-VI semiconductors; elemental semiconductors; interface states; leakage currents; photoconductivity; photodetectors; semiconductor heterojunctions; silicon; silicon compounds; ultraviolet detectors; wide band gap semiconductors; zinc compounds; Si-SiOx-ZnO-ZnO; UV-generated carriers; UV-to-visible rejection ratio; electric field; enhanced ultraviolet response; interface states; leakage current; p-Si/SiOx/i-ZnO/n-ZnO photodetectors; p-i-n heterojunction photodetectors; photocurrent; Heterojunctions; Leakage currents; PIN photodiodes; Photoconductivity; Silicon; Zinc oxide; ${rm SiO}_{rm x}$; Ultraviolet response; ZnO; heterojunction photodetectors; p-i-n;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2014.2314862
Filename :
6783787
Link To Document :
