Title :
Towards a large-signal noise model for GaN HEMT devices
Author :
Rudolph, Matthias ; Doerner, Ralf
Author_Institution :
Dept. of RF & Microwave Tech., Brandenburg Univ. of Technol., Cottbus, Germany
Abstract :
This paper proposes a bias-dependent description of the HEMT noise sources that is optimized with respect to implementation in large-signal compact models. The noise is described as a function of drain current instead of small-signal parameters like the transconductance in order to maintain consistency between the small-signal and large-signal world.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; GaN HEMT devices; HEMT noise sources; bias-dependent description; drain current; large-signal noise model; Gallium nitride; HEMTs; Integrated circuit modeling; Microwave circuits; Microwave transistors; Noise; MODFETs; noise; semiconductor device modeling; semiconductor device noise modeling;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location :
Nuremberg
