Title :
InP DHBT TIA-DMUX integrated circuit for 100-Gb/s optical communication systems
Author :
Dupuy, Jean-Yves ; Konczykowska, Agnieszka ; Jorge, Filipe ; Riet, M. ; Berdaguer, P. ; Nodjiadjim, V. ; Godin, J. ; Ouslimani, A.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Abstract :
We report the design and measurement of a 1:2 demultiplexer (DMUX) integrated circuit (IC) including a transimpedance amplifier (TIA) as input stage for optimum sensitivity and automatic single-ended-to-differential signal conversion. The monolithic TIA-DMUX was realised in a 0.7-μm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. Measured on wafer at 100 Gb/s with a single-ended input signal of 28.2-mVpp eye height, the TIA-DMUX provides two clear 50-Gbit/s demultiplexed outputs larger than 400 mVpp for a total power consumption of 2.1 W.
Keywords :
III-V semiconductors; demultiplexing equipment; heterojunction bipolar transistors; indium compounds; operational amplifiers; optical communication equipment; DHBT TIA-DMUX integrated circuit; DHBT technology; IC; InP; automatic single-ended-to-differential signal conversion; bit rate 100 Gbit/s; bit rate 50 Gbit/s; demultiplexer integrated circuit; double heterojunction bipolar transistor; monolithic TIA-DMUX; optical communication systems; optimum sensitivity; power 2.1 W; single-ended input signal; transimpedance amplifier; DH-HEMTs; Indium phosphide; Integrated circuits; Integrated optics; Optical transmitters; Receivers; Sensitivity; Indium compounds; broadband amplifiers; demultiplexing; heterojunction bipolar transistors;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location :
Nuremberg
