DocumentCode
656840
Title
Wavelet solution of the Schrödinger equation for a triangular potential barrier and applied results on a MOM tunnel junction
Author
Malureanu, Emilia-Simona ; Craciunoiu, F.
Author_Institution
Electr. Mater. Lab., Politeh. Univ. of Bucharest, Bucharest, Romania
Volume
1
fYear
2013
fDate
14-16 Oct. 2013
Firstpage
65
Lastpage
68
Abstract
Quantum tunneling has many important applications in electronics. In thin layers structures, when the tunneling phenomenon occurs at the metal-insulator contact barrier, as for the MIM or MOS structures, we are dealing with the Fowler-Nordheim field emission. In these structures we have to calculate the currents densities that go through. The current density is calculated based on the transmission coefficient through the barrier, which is determined by solving the Schrödinger equation. The calculation methods currently used lead to values that get predictions of emission current density too low. The transmission coefficient is calculated by wavelet approximation and the results are validated experimentally on a lateral MOM tunnel junction.
Keywords
MIM structures; Schrodinger equation; aluminium; current density; field emission; silicon compounds; tunnelling; Al-SiO2-Al; Fowler-Nordheim field emission; MOS structures; Schrodinger equation; emission current density; lateral MOM tunnel junction; metal-insulator contact barrier; quantum tunneling; thin layers structures; transmission coefficient; triangular potential barrier; tunneling phenomenon; wavelet approximation; wavelet solution; Current density; Electric potential; Electrodes; Equations; Mathematical model; Tunneling; MOM junction; Schrödinger equation; dyadic wavelets; potential barriers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2013 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4673-5670-1
Electronic_ISBN
1545-827X
Type
conf
DOI
10.1109/SMICND.2013.6688091
Filename
6688091
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