DocumentCode
656848
Title
Investigations of surface properties of SiO2 and Si3 N4 thin layers, used for MEMS vibrating structures applications
Author
Voicu, Ramiro ; Obreja, Cosmin ; Gavrila, R. ; Muller, Rudolf ; Rymuza, Zygmund ; Michalowski, Marcin
Author_Institution
Modelling & Comput.-Aided Design Lab., IMT Bucharest, Bucharest, Romania
Volume
1
fYear
2013
fDate
14-16 Oct. 2013
Firstpage
111
Lastpage
114
Abstract
To understand the surface topography of MEMS vibrating structures, different effects as contact phenomena, stiction, friction, adhesion, etc, on the lifetime and performance of these devices, require special consideration. We obtained results regarding the topographic analyses of 3 different experimental samples, using the same design, but different materials for manufacturing, specific to MEMS technology. Three different test methods were performed on three separate types of samples. The samples were fabricated as following: Silicon, Silicon Oxide layer on Silicon and Silicon Nitride layer on a Silicon Oxide layer on Silicon. In order to measure their properties a topography scan, a comparative friction test and a pull off-force measurement were carried out using an Atomic Force Microscope (AFM).
Keywords
atomic force microscopy; micromachining; micromechanical devices; silicon compounds; surface topography; vibrations; MEMS vibrating structures applications; Si3N4; SiO2; atomic force microscope; comparative friction test; pull off force measurement; surface properties; surface topography; thin layers; topographic analyses; Force; Friction; Micromechanical devices; Pollution measurement; Silicon; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2013 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4673-5670-1
Electronic_ISBN
1545-827X
Type
conf
DOI
10.1109/SMICND.2013.6688104
Filename
6688104
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