DocumentCode :
656852
Title :
Effects of the preparation conditions and furnace annealing on the structure and morphology of Zn0.8Cd0.2Se thin films
Author :
Bineva, I. ; Nesheva, D. ; Aneva, Z. ; Levi, Zohar ; Dinescu, Adrian ; Danila, M. ; Muller, Rudolf
Author_Institution :
Inst. of Solid State Phys., Sofia, Bulgaria
Volume :
1
fYear :
2013
fDate :
14-16 Oct. 2013
Firstpage :
129
Lastpage :
132
Abstract :
Single layers of Zn0.8Cd0.2Se were prepared by thermal vacuum evaporation at room substrate temperature. Two groups of samples with the same composition were produced by applying consecutive deposition of ZnSe and CdSe sublayers with nominal thickness of 0.12 and 0.37 or 0.08 and 0.23 nm, respectively. Atomic Force Microscopy (AFM), Scanning Electon Microscopy (SEM) and X-ray diffraction (XRD) measurements were performed to explore the evolution of the crystal structure, microstructure, composition and surface morphology with the change of preparation conditions and upon furnace annealing of Zn0.8Cd0.2Se thin films (400nm) with various sublayer thickness at 673 K in an inert atmosphere. It has been found that as-deposited films were nanocrystalline with a grain size less than or around 5 nm and cubic structure. The variation of the sublayer thickness does not appreciably affect the film crystal structure and composition. Upon annealing the cubic structure is preserved, the average nanocrystals size increased and root mean square roughness strongly decreases.
Keywords :
II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; cadmium compounds; grain size; scanning electron microscopy; semiconductor growth; semiconductor thin films; surface morphology; surface roughness; vacuum deposition; wide band gap semiconductors; zinc compounds; AFM; SEM; X-ray diffraction; XRD; Zn0.8Cd0.2Se; atomic force microscopy; crystal structure; deposition; film thickness; furnace annealing; grain size; microstructure; morphology; nanocrystals size; root mean square roughness; scanning electon microscopy; size 0.08 nm to 0.37 nm; structural properties; sublayer thickness; surface morphology; temperature 293 K to 298 K; temperature 673 K; thermal vacuum evaporation; thin films; Annealing; Films; Grain size; Morphology; Substrates; Surface morphology; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2013 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4673-5670-1
Electronic_ISBN :
1545-827X
Type :
conf
DOI :
10.1109/SMICND.2013.6688110
Filename :
6688110
Link To Document :
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