Title :
POSFET tactile sensing chips using CMOS technology
Author :
Dahiya, Ravinder S. ; Adami, Andrea ; Collini, Cristian ; Valle, M. ; Lorenzelli, Leandro
Author_Institution :
Electron. & Nanoscale Eng. Res. Div., Univ. of Glasgow, Glasgow, UK
Abstract :
This work presents the advanced version of novel POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) devices based tactile sensing chip. The tactile sensing chip in the new version, presented here, has been fabricated using CMOS (Complementary Metal Oxide Semiconductor) technology. The chip consists of 4 × 4 POSFET touch sensing devices, four temperature diodes, and the electronic circuitry comprising of multiplexers, current mirrors, high compliance current sinks and voltage output buffers. The on chip POSFET devices have linear response in the tested dynamic contact forces range of 0.01-3N and the sensitivity (without amplification) is 102.4 mV/N.
Keywords :
CMOS integrated circuits; buffer circuits; current mirrors; field effect transistors; multiplexing equipment; piezoelectric devices; piezoelectric semiconductors; tactile sensors; CMOS technology; complementary metal oxide semiconductor; current mirror; current sink; dynamic contact force; electronic circuit; linear response; multiplexer; on chip POSFET device; piezoelectric oxide semiconductor field effect transistor; tactile sensing chip; temperature diode; touch sensing device; voltage output buffer; Arrays; CMOS integrated circuits; Logic gates; Robot sensing systems; System-on-chip; Temperature sensors;
Conference_Titel :
SENSORS, 2013 IEEE
Conference_Location :
Baltimore, MD
DOI :
10.1109/ICSENS.2013.6688149
