A dual mode SOI CMOS MEMS based thermal conductivity and IR absorption gas sensor

Author

Sarfraz, Sohab ; Kumar, R. Vintoh ; Udrea, F.

Author_Institution

Dept. of Mater. Sci. & Metall., Univ. of Cambridge, Cambridge, UK

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

Design, FEM modelling and characterization of a novel dual mode thermal conductivity and infrared absorption sensor using SOI CMOS technology is reported. The dual mode sensing capability is based on the temperature sensitivity and wideband infrared radiation emission of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm2. Infrared detectors usually use thermopiles in addition to a separate IR source. A single highly responsive dual mode source and sensing element targeting not only low molecular mass gases but also greenhouse gases, while consuming 40 mW power at 700 °C in synthetic air, thus makes this sensor particularly viable for battery powered handheld devices.

Keywords

CMOS integrated circuits; elemental semiconductors; finite element analysis; gas sensors; infrared detectors; integrated circuit design; light absorption; microsensors; silicon; silicon-on-insulator; temperature sensors; thermal conductivity measurement; thermopiles; FEM modelling; IR absorption gas sensor; Si; battery powered handheld device; dual mode SOI CMOS MEMS technology; dual mode thermal conductivity; greenhouse gas; infrared absorption gas sensor; infrared detector; molecular mass gas; power 40 mW; resistive heating element; size 1 mum; temperature 700 degC; temperature sensitivity; thermopile; wideband infrared radiation emission; CMOS integrated circuits; Conductivity; Gas detectors; Temperature sensors; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688153

Filename

6688153