DocumentCode :
656971
Title :
Multilayer SAW device for flow rate sensing in a microfluidic channel
Author :
Hang Bui Thu ; Trinh Chu Duc
Author_Institution :
Dept. of Microelectromechanical Syst. & Microsyst., Univ. of Eng. & Technol., Hanoi, Vietnam
fYear :
2013
fDate :
3-6 Nov. 2013
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents a novel microfluidic flow rate sensor based on surface acoustic wave (SAW) principle and aluminum nitride (AlN) film on silicon substrate. The working principles of this proposed SAW device are velocity decay, delay time as well as insertion losses reported in cases of linear and exponential motion. It utilizes CMOS compatible materials, AlN film on Si substrate, being suitable for inexpensive and reliable systems. AlN thin film layer is deposited on the top of silicon substrate. The microfluidic channel is etched through wafer and perpendicular to the SAW propagation path between the transmitter IDT and receiver IDT. Electrical and mechanical characteristic analysis is performed to accurately determine the relation between flow motion and output signal. Velocity decay constant decreases and achieves the saturated state from -1 dB to -4.5 dB after 60 mm/s for the linear motion. Otherwise, velocity decay constant is inversely proportional to the exponential order of velocity due to the leaky acoustic wave in the microfluidic channel.
Keywords :
CMOS integrated circuits; aluminium compounds; flow sensors; interdigital transducers; microchannel flow; microsensors; multilayers; silicon; surface acoustic wave sensors; thin film sensors; AlN; AlN thin film layer; CMOS compatible materials; SAW propagation path; Si; aluminum nitride film; delay time; electrical characteristic analysis; exponential motion; exponential order; flow motion; flow rate sensing; inexpensive system; insertion losses; linear motion; mechanical characteristic analysis; microfluidic channel; microfluidic flow rate sensor; multilayer SAW device; noise figure -1 dB to -4.5 dB; output signal; receiver IDT; reliable system; silicon substrate; surface acoustic wave principle; transmitter IDT; velocity 60 mm/s; velocity decay constant; Attenuation; III-V semiconductor materials; Liquids; Substrates; Surface acoustic waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SENSORS, 2013 IEEE
Conference_Location :
Baltimore, MD
ISSN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2013.6688246
Filename :
6688246
Link To Document :
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