Title :
Pulse width modulation circuit for ISFET drift reset
Author :
Shah, Shalin ; Christen, Jennifer Blain
Author_Institution :
Fulton Sch. of Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
We present the simulation results for a Pulse Width Modulation (PWM) circuit (to be fabricated in a 0.5 μm CMOS process) used to cycle the electric field in an Ion Sensitive Field Effect Transistor (ISFET). Vertical electric field, which controls the inversion layer in a field effect transistors, can be used to reset the inherent drift behavior of ISFET. A PWM circuit, to cycle the vertical field, enables us to precisely monitor the pH of an electrolyte without needing to manually calibrate the ISFET. Two or more ISFETs could be used with the devices alternatively being placed in reset and measurement mode. By combining the outputs from measurement phase of the devices, we can read the pH of the electrolyte continuously. The PWM circuit is composed of a 10.9 kHz ring oscillator, five divider circuits giving a 100,000 frequency division, a 6 bit counter, and a Digital to Analog Converter (DAC) that feeds into a comparator whose output selects the mode of operation for the ISFETs.
Keywords :
CMOS integrated circuits; counting circuits; detector circuits; digital-analogue conversion; dividing circuits; ion sensitive field effect transistors; modulators; oscillators; pulse width modulation; CMOS integrated circuit; ISFET drift reset; PWM circuit; counting circuit; digital-analog converter; divider circuit; frequency 10.9 kHz; ion sensitive field effect transistor; pulse width modulation circuit; ring oscillator; size 0.5 mum; vertical electric field; Chemical sensors; Logic gates; Monitoring; Pulse width modulation; Ring oscillators; Sensors; Transistors;
Conference_Titel :
SENSORS, 2013 IEEE
Conference_Location :
Baltimore, MD
DOI :
10.1109/ICSENS.2013.6688269