DocumentCode :
657008
Title :
Magnetic flux modulation with a piezoelectric silicon bridge for 1/f noise reduction in magnetoresistive sensors
Author :
Jiafei Hu ; Wugang Tian ; Hongfeng Pang ; Jianqiang Zhao ; Wenyin Li ; Dixiang Chen ; Mengchun Pan
Author_Institution :
Coll. of Mechatron. & Autom., Nat. Univ. of Defense Technol., Changsha, China
fYear :
2013
fDate :
3-6 Nov. 2013
Firstpage :
1
Lastpage :
4
Abstract :
Magnetoresistive sensors have plenty of applications in magnetic sensing areas, but magnetic and nonmagnetic 1/f noise severely degrades their low-frequency performances, especially detection sensitivity with hundreds of loss. In this paper, vertical motion flux modulation scheme with a piezoelectric silicon bridge is recommended for 1/f noise reduction, due to its effectiveness, simplicity and stability as well as moderate modulation efficiency. In our prototype sensor, the detection sensitivity was greatly improved to ~80 pT /√Hz at 1 Hz, which was near 300 times upgraded, when the detected magnetic field was transferred up to the resonance frequency of the piezoelectric silicon bridge.
Keywords :
1/f noise; crystal resonators; lead compounds; magnetic flux; magnetic sensors; magnetoresistive devices; prototypes; silicon; 1/f noise reduction; PZT-Si; detection sensitivity; frequency 1 Hz; magnetic flux modulation; magnetoresistive sensors; moderate modulation efficiency; piezoelectric silicon bridge; resonance frequency; vertical motion flux modulation scheme; Bridge circuits; Magnetic flux; Magnetic sensors; Modulation; Prototypes; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SENSORS, 2013 IEEE
Conference_Location :
Baltimore, MD
ISSN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2013.6688288
Filename :
6688288
Link To Document :
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