DocumentCode
657019
Title
A novel low-voltage large-displacement bulk silicon comb-drive actuator based on post-CMOS process
Author
Chun-Hua Cai ; Ming Qin
Author_Institution
Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China
fYear
2013
fDate
3-6 Nov. 2013
Firstpage
1
Lastpage
4
Abstract
This paper presents a novel low-voltage large-displacement bulk silicon MEMS comb-drive actuator. The non-initial overlap and unequal wide comb fingers of the actuator are firstly utilized to reduce the side instability and to improve the maximum stable displacement of the actuator. Compared with other comb-drive actuators, an optimal cascade folded beam and the fabrication tolerances are used to achieve the displacement of more than 50μm at 24V driving within a relatively small size. The layout size of the actuator is 1.14mm2. The comb-drive actuators are fabricated using a post-CMOS process based on Au-Au bonding technology.
Keywords
CMOS integrated circuits; cascade networks; elemental semiconductors; integrated circuit bonding; microactuators; silicon; Au-Au bonding technology; Si; fabrication tolerances; low-voltage large-displacement bulk silicon MEMS comb-drive actuator; optimal cascade folded beam; post-CMOS process; voltage 24 V; Actuators; Etching; Fabrication; Fingers; Force; Micromechanical devices; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
SENSORS, 2013 IEEE
Conference_Location
Baltimore, MD
ISSN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2013.6688299
Filename
6688299
Link To Document