Title :
Microfabricated two-dimensional (2D) hexagonal lattice trap
Author :
Rattanasonti, H. ; Srinivasan, P. ; Kraft, Michael ; Sterling, R.C. ; Weidt, S. ; Lake, K. ; Webster, S.C. ; Hensinger, W.K.
Author_Institution :
Fac. of Phys. Sci. & Eng., Univ. of Southampton, Southampton, UK
Abstract :
We present the design, fabrication and experimental result of a two-dimensional (2D) hexagonal lattice trap capable of trapping a lattice of charged particles. The microtrap consists of 29-hexagonal lattice sites each capable of trapping an ion. Each trapped ion has up to six neighbors with an ion-ion separation of 270.5 μm. A SOI-based structure was optimized to improve the trap performance substantially increasing the breakdown voltage (>1 kV) previously reported. Ytterbium (174Yb002B;) ions were successfully confined in an ultra-high vacuum (UHV) system by applying a radio frequency (RF) voltage of 455 V at a drive frequency Ω/2π = 32.2 MHz. In addition, our design is suitable to control the trapping height in situ by applying a secondary rf potentials. Numerical simulations of the 2D lattice trap demonstrated a large operating range by trapping ions as well as micro-particles with charge to mass ratio in order of 10-4 to 105 Kg/C at a frequency range of a few kilohertz to megahertz.
Keywords :
electric breakdown; microfabrication; numerical analysis; silicon-on-insulator; trapped ions; ytterbium; 2D hexagonal lattice trap microfabrication; 2D ion trapping structure; RF potential; SOI-based structure optimization; Si; UHV system; Yb; breakdown voltage; charged particle; frequency 32.2 MHz; ion-ion separation; microparticle; microtrap; numerical simulation; trapping height control; ultra high vacuum; voltage 455 V; Charge carrier processes; Electrodes; Fabrication; Ions; Lattices; Radio frequency; Silicon;
Conference_Titel :
SENSORS, 2013 IEEE
Conference_Location :
Baltimore, MD
DOI :
10.1109/ICSENS.2013.6688359