Static and dynamic responses of GaN piezoresistive microcantilever with embedded AlGaN/GaN HFET for sensing applications

Author

Talukdar, Anup ; Qazi, M. ; Koley, Goutam

Author_Institution

Univ. of South Carolina, Columbia, SC, USA

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

In this article, a highly sensitive AlGaN/GaN Heterostructure Field Effect Transistor (HFET) embedded GaN piezoresistive microcantilever is presented. In addition, deflection transduction signal from the HFET is showed for the first time to determine dynamic response of the cantilever, and also acoustic wave resonance which detected periodic vibration amplitudes of 4.6 nm when the sensor was placed 1 cm away from an ultrasonic source. Moreover sensing of acetone has been demonstrated using photo acoustic wave principal using the GaN microcantilever embedded with AlGaN/GaN HFET.

Keywords

III-V semiconductors; aluminium compounds; cantilevers; chemical sensors; gallium compounds; high electron mobility transistors; intelligent sensors; microsensors; organic compounds; photodetectors; piezoresistive devices; ultrasonic transducers; vibration measurement; wide band gap semiconductors; GaN-AlGaN-GaN; acetone; acoustic wave resonance; distance 1 cm; embedded HFET; heterostructure field effect transistor; periodic vibration amplitude detection; photoacoustic wave principal; piezoresistive microcantilever; sensing application; size 4.6 nm; transduction signal deflection; ultrasonic source; Acoustics; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Piezoresistance; Sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688393

Filename

6688393