Impact of mechanical stress on bipolar transistor current gain and Early voltage

Author

Jaeger, Richard C. ; Hussain, Shiraz ; Suhling, Jeffrey C. ; Gnanachchelvi, Parameshwaran ; Wilamowski, Bogdan M. ; Hamilton, Michael C.

Author_Institution

Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL, USA

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

Fundamental results for the stress dependence of the current gain and Early voltage of vertical npn and pnp bipolar junction transistors (BJTs) on (100) and (111) silicon are presented with experimental verification. These results demonstrate the direct relationship between current gain and piezoresistive coefficients and show that Early voltage is independent of stress. This information completes the data necessary for modeling the impact of stress on bipolar devices and circuits, and the modeling will facilitate simulation of the impact of process and packaging induced stress on precision analog circuits and sensors. A sample circuit simulation using the model is provided.

Keywords

analogue integrated circuits; bipolar transistors; circuit simulation; integrated circuit modelling; piezoresistance; semiconductor device models; (100) silicon; (111) silicon; Si; circuit simulation; current gain; early voltage; mechanical stress impact; piezoresistive coefficients; precision analog circuits; vertical npn bipolar junction transistors; vertical pnp bipolar junction transistors; Doping; Integrated circuit modeling; Piezoresistance; Sensors; Silicon; Stress; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688466

Filename

6688466