Silicon photomultiplier technology for low-light intensity detection

Author

Mazzillo, Massimo ; Nagy, Ferenc ; Sanfilippo, D. ; Valvo, G. ; Carbone, Beatrice ; Piana, Alessandro ; Fallica, G.

Author_Institution

IMS R&D, STMicroelectron., Catania, Italy

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

Silicon photomultipliers (SiPMs) consist in arrays of tiny, passive quenched avalanche photodiode microcells working in Geiger mode and connected in parallel via integrated resistors. Novel types of SiPMs are being developed at STMicroelectronics (Catania, Italy) in n-on-p and p-on-n junction configurations optimized for visible-near infrared and blue-near ultraviolet light detection, respectively. All the tested devices show interesting performances in terms of high photon detection efficiency, low level dark rate, fast timing response and very good single photoelectron resolution also for high overvoltage values, confirming the excellent single photon detection capability of ST SiPM technology.

Keywords

avalanche photodiodes; elemental semiconductors; infrared detectors; intensity measurement; microsensors; p-n junctions; photodetectors; photomultipliers; sensor arrays; silicon; ultraviolet detectors; Catania Italy; Geiger mode; ST SiPM technology; STMicroelectronics; Si; blue-near ultraviolet light detection; low-light intensity detection; n-on-p junction configuration; p-on-n junction configuration; parallel integrated resistor; sensor array; silicon photomultiplier technology; single photoelectron resolution; single photon detection capability; timing response; tiny passive quenched avalanche photodiode microcell; visible-near infrared detection; Microcell networks; Photomultipliers; Photonics; Silicon; Standards; Temperature measurement; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688599

Filename

6688599