Low-noise smart sensor based on silicon nanowire for MEMS resistive microphone

Author

Nebhen, E. Savary J. ; Rahajandraibe, W. ; Dufaza, C. ; Meillere, Stephane ; Kussener, Edith ; Barthelemy, Herve ; Czarny, J. ; Walther, Andrea

Author_Institution

IM2NP, Aix Marseille Univ., Marseille, France

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

The design of CMOS integrated circuits dedicated to hybrid integration of a MEMS resistive microphone with readout interface is presented. Audio sensing is achieved with an innovative low-cost technology that implements piezoresistive detection in MEMS devices with single crystal silicon nanowires. The complete circuit includes a custom designed analog front-end consisting of a sensor conditioning and a fourth order single bit continuous-time sigma-delta modulator (CT-ΣΔM). The complete interface circuit exhibits a current consumption of 2mA. The obtained smart-sensor features a reduced output data rate that is suitable for a wireless sensor network with direct transmission of the raw data to a remote base station.

Keywords

CMOS integrated circuits; audio signal processing; data acquisition; intelligent sensors; micromechanical devices; microphones; nanowires; piezoresistive devices; sigma-delta modulation; wireless sensor networks; CMOS integrated circuits; CT-ΣΔM; MEMS devices; MEMS resistive microphone; audio acquisition systems; audio sensing; direct raw data transmission; fourth order single bit continuous-time sigma-delta modulator; low-noise smart sensor; piezoresistive detection; readout interface; remote base station; sensor conditioning; single crystal silicon nanowires; wireless sensor network; CMOS integrated circuits; Micromechanical devices; Microphones; Modulation; Noise; Silicon; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688605

Filename

6688605