RF power potential of High-k metal gate 28 nm CMOS technology

This paper reports on the first RF microwave power characterization of High-k metal gate 28 nm CMOS devices. Measurement was performed on Load-pull configuration using a Nonlinear Vector Network Analyzer (NVNA) associated with a passive tuner at the fundamental frequency of 10 GHz. Behavior of these High-k metal gate 28 nm CMOS was analyzed on large signal conditions in class A operation. The maximal drain voltage withstanding was determined for various topologies. Transistors behavior was analyzed for optimal load impedance condition in terms of microwave output power and power added efficiency. Finally, a comparison with the standard 45 nm CMOS was achieved.