Modeling of light-emitting diode with top p-electrode patterned as a mesh

Author

Khmyrova, Irina ; Hasegawa, T. ; Tomioka, Satoshi ; Watanabe, N. ; Kholopova, Julia ; Kovalchuk, Alon ; Polushkin, Evgeny ; Zernlyakov, Valery ; Kozlov, D. ; Shestakova, Elena ; Shapoval, Sergei

Author_Institution

Univ. of Aizu, Aizu-Wakamatsu, Japan

Volume

2

fYear

2013

fDate

14-16 Oct. 2013

Firstpage

255

Lastpage

258

Abstract

Light-emitting diodes (LEDs) with patterned metal electrode to the top p-semiconductor layer resulting in enhanced light extraction are studied. Analytical model which includes an efficient procedure for numerical calculation of light extraction under nonuniform current injection caused by contact patterning is developed and used for modeling of two-dimensional spatial distributions of potential, injected current and output optical power.

Keywords

light emitting diodes; LED; contact patterning; enhanced light extraction; injected current; light-emitting diode modeling; nonuniform current injection; numerical calculation; output optical power; patterned metal electrode; top p-electrode; top p-semiconductor layer; two-dimensional spatial distributions; Adaptive optics; Electric potential; Electrodes; Graphical models; Light emitting diodes; Metals; Numerical models;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2013 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4673-5670-1

Electronic_ISBN

1545-827X

Type

conf

DOI

10.1109/SMICND.2013.6688671

Filename

6688671